a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units bv ces i c = 160 ma 42 v bv ebo i e = 2.0 ma 3.5 v i cbo v cb = 22 v 4.0 ma h fe v ce = 5.0 v i c = 800 ma 10 100 --- p g c v ce = 22 v f = 2000 - 2300 mhz p out = 18.0 w 7.0 35 db % npn silicon rf power transistor MRAL2023-18 package style .250 2l flg (c) minimum inches/mm maximum inches/mm a .095/2.41 .105/2.67 b 0125/3.18 c .380/9.65 .390/9.91 d .780/19.81 e .392/9.96 .408/10.36 f .645/16.38 .655/16.64 g .895/22.73 .905/22.99 h .002/0.05 .006/0.15 i .055/1.40 .065/1.65 j .105/2.67 .130/3.30 k .230/5.84 l .392/.408 .408/10.36 description: the asi MRAL2023-18 is a common base device designed for class c amplifier applications in l- band fm microwave links. features include: ? gold metalization ? emitter ballasting ? input/output matching maximum ratings i c 4.0 a v ces 42 v p diss 70 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 2.5 c/w
|
